Thermally stable polycrystalline diamond material with gradient structure

ABSTRACT

A diamond construction may include a diamond body comprising a plurality of bonded-together diamond crystals forming a matrix phase, and a plurality of interstitial regions disposed between the bonded-together diamond crystals, the diamond body comprising: a first diamond region extending a depth from a surface of the diamond body being substantially free of a catalyst material used to form the diamond body, wherein the first diamond region comprises the matrix phase and in at least a portion of the plurality of interstitial spaces, the first diamond region comprises a metal carbide and an inert metal, wherein the metal carbide is formed as a result of reaction between the diamond crystals in the matrix phase and a carbide-forming metal; and a second diamond region adjacent the first diamond region comprising the matrix phase and a Group VIII metal in the interstitial regions.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part of U.S. patent applicationSer. No. 11/867,629, filed on Oct. 4, 2007, which is herein incorporatedby reference in its entirety.

BACKGROUND OF INVENTION

1. Field of the Invention

Embodiments disclosed herein relate generally to diamond constructionsand, more specifically, to polycrystalline diamond-containingconstructions and compacts formed therefrom that are speciallyengineered to provide improved thermal and mechanical properties whencompared to conventional polycrystalline diamond materials.

2. Background Art

Polycrystalline diamond (PCD) materials and PCD elements formedtherefrom are well known in the art. Conventional PCD is formedsubjecting diamond grains in the presence of a suitable solvent catalystmaterial to processing conditions of extremely high pressure/hightemperature (HPHT), where the solvent catalyst material promotes desiredintercrystalline diamond-to-diamond bonding between the grains, therebyforming a PCD structure. The resulting PCD structure produces enhancedproperties of wear resistance and hardness, making such PCD materialsextremely useful in aggressive wear and cutting applications where highlevels of wear resistance and hardness are desired.

Solvent catalyst materials typically used for forming conventional PCDinclude metals from Group VIII of the Periodic table, with Cobalt (Co)being the most common. Conventional PCD can comprise from 85 to 95% byvolume diamond and a remaining amount of the solvent catalyst material.The solvent catalyst material is present in the microstructure of thePCD material within interstitial regions that exist between thebonded-together diamond grains.

A problem known to exist with such conventional PCD is thermaldegradation due to differential thermal expansion characteristicsbetween the interstitial solvent catalyst material used to sinter thePCD and the intercrystalline bonded diamond. Such differential thermalexpansion is known to occur at temperatures of about 400° C., causingruptures to occur in the diamond-to-diamond bonding, and resulting inthe formation of cracks and chips in the PCD structure.

Another problem known to exist with conventional PCD materials is alsorelated to the presence of the solvent catalyst material used to sinterthe PCD in the interstitial regions and the adherence of the solventcatalyst to the diamond crystals to cause another form of thermaldegradation. Specifically, the solvent catalyst material is known tocause an undesired catalyzed phase transformation in diamond (convertingit to carbon monoxide, carbon dioxide, or graphite) with increasingtemperature, thereby limiting practical use of conventional PCD to about750° C.

Attempts at addressing such unwanted forms of thermal degradation in PCDare known in the art. Generally, these attempts have involved forming aPCD body having an improved degree of thermal stability when compared tothose conventional PCD materials discussed above. One known technique ofproducing a thermally stable PCD body involves at least a two-stageprocess of first forming a conventional sintered PCD body in the mannerdescribed above, and then removing the solvent catalyst materialtherefrom.

This method produces a diamond body that is substantially free of thesolvent catalyst material, and is therefore promoted as providing adiamond body having improved thermal stability when compared toconventional PCD. However, the resulting thermally stable diamond bodytypically does not include a metallic substrate attached thereto, bysolvent catalyst infiltration from such substrate due to the solventcatalyst removal process, as all of the solvent catalyst material hasbeen removed therefrom.

Also, the resulting diamond body has a material microstructurecomprising a matrix phase of bonded-together diamond grains, and aplurality of open interstitial regions, pores or voids distributedthroughout the diamond body. The presence of such population of openvoids throughout the diamond body adversely impacts desired mechanicalproperties of the diamond body, e.g., provides a diamond body havingreduced properties of strength and toughness when compared toconventional PCD. It is theorized that the presence of the catalystmaterial within the voids in conventional PCD operates to place thesurrounding diamond matrix in a state of compression that operates toprovide improved mechanical strength, e.g., fracture toughness and/orimpact strength, to the PCD. Removing the catalyst material from thediamond body is thus believed to remove the diamond from a compressionstate, thereby also reducing the above-noted related mechanicalproperties of the diamond body.

Thus, thermally stable diamond bodies made by removing the solventcatalyst material therefrom are known to be relatively brittle and havepoor properties of strength and/or toughness, thereby limiting their useto less extreme or severe applications. This feature makes suchconventional thermally stable diamond bodies generally unsuited for usein aggressive cutting and/or wear applications, such as use as a cuttingelement of a subterranean drilling and the like.

The resulting diamond body, rendered free of the solvent catalystmaterial, has a coefficient of thermal expansion that is sufficientlydifferent from that of conventional substrate materials (such as WC—Coand the like) typically infiltrated or otherwise attached toconventional PCD bodies to provide a diamond compact to adopt thediamond body construction for use with desirable wear and/or cutting enduse devices. This difference in thermal expansion between the nowthermally stable diamond body and the substrate, combined with the poorwetability of the diamond body surface due to the removal of the solventcatalyst material, makes it very difficult to form an adequateattachment between the diamond body and conventionally used substrates,thereby requiring that the diamond body itself be attached or mounteddirectly to the wear and/or cutting device.

However, since such thermally stable diamond body is devoid of ametallic substrate, it cannot (e.g., when configured for use as acutting element in a bit used for subterranean drilling) be attached tosuch drill bit by conventional brazing process. Thus, use of suchthermally stable diamond body in this particular applicationnecessitates that the diamond body itself be attached to the drill bitby mechanical or interference fit during manufacturing of the drill bit,which is labor intensive, time consuming, and which does not provide amost secure method of attachment.

Other attempts that have been made to improve the thermal stability ofPCD materials include where the solvent metal catalyst material used toform the PCD is removed from only a region of the body, i.e., where thesolvent metal catalyst is removed from a defined region of the diamondbody that extends a depth from the body surface. Such diamond bodyconstructions are formed by starting with conventional PCD, and thenselectively removing the solvent metal catalyst from only a region ofthe body extending a depth from the body surface, wherein a remainingportion of the diamond body comprises conventional PCD. While thisapproach has demonstrated some improvement in thermal stability overconventional PCD, the resulting diamond body still suffers from theproblems noted above. Namely, that the treated region rendered devoid ofthe catalyst material has reduced mechanical properties of strengthand/or toughness when compared to conventional PCD, due to the absenceof the catalyst material and the related presence of the plurality ofempty pores or voids in the interstitial regions.

It is, therefore, desired that a diamond construction be developedhaving improved thermal characteristics and thermal stability whencompared to conventional PCD materials. It is also desired that suchdiamond construction be engineered to include a suitable substrate toform a compact construction that can be attached to a desired wearand/or cutting device by conventional method such as welding or brazingand the like. It is further desired that such diamond constructiondisplay desired mechanical properties such as strength and toughnesswhen compared to conventional thermally stable diamond bodies, i.e.,characterized by having a plurality of empty interstitial regions formedby removing the catalyst material therefrom.

SUMMARY OF INVENTION

In one aspect, embodiments disclosed herein relate to a diamondconstruction that includes a diamond body comprising a plurality ofbonded-together diamond crystals forming a matrix phase, and a pluralityof interstitial regions disposed between the bonded-together diamondcrystals, the diamond body comprising: a first diamond region extendinga depth from a surface of the diamond body being substantially free of acatalyst material used to form the diamond body, wherein the firstdiamond region comprises the matrix phase and in at least a portion ofthe plurality of interstitial spaces, the first diamond region comprisesa metal carbide and an inert metal, wherein the metal carbide is formedas a result of reaction between the diamond crystals in the matrix phaseand a carbide-forming metal; and a second diamond region adjacent thefirst diamond region comprising the matrix phase and a Group VIII metalin the interstitial regions.

In another aspect, embodiments disclosed herein relate to a drill bitthat includes a body; and a plurality of cutting elements attachedthereto, wherein at least one of the cutting elements comprise a diamondconstruction that may include a diamond body comprising a plurality ofbonded-together diamond crystals forming a matrix phase, and a pluralityof interstitial regions disposed between the bonded-together diamondcrystals, the diamond body comprising: a first diamond region extendinga depth from a surface of the diamond body being substantially free of acatalyst material used to form the diamond body, wherein the firstdiamond region comprises the matrix phase and in at least a portion ofthe plurality of interstitial spaces, the first diamond region comprisesa metal carbide and an inert metal, wherein the metal carbide is formedas a result of reaction between the diamond crystals in the matrix phaseand a carbide-forming metal; and a second diamond region adjacent thefirst diamond region comprising the matrix phase and a Group VIII metalin the interstitial regions.

In yet another aspect, embodiments disclosed herein relate to a methodfor making a diamond construction that includes treating a diamond bodyhaving a material microstructure comprising a matrix phase ofbonded-together diamond grains and interstitial regions disposed betweenthe diamond grains, wherein a catalyst material used to form the diamondbody during a first high pressure/high temperature condition is disposedwithin the interstitial regions, wherein during the step of treating,the catalyst material is removed from interstitial regions of thediamond body; placing an infiltrant material next to the diamond bodydepleted of the catalyst material, wherein the infiltrant materialcomprises an alloy having at least two metals, one of the two metalsbeing a carbide-forming metal, and the other of the two metals being aninert metal; and subjecting the diamond body to second highpressure/high temperature condition in order to allow an alloy toinfiltrate into interstitial regions and to form a metal carbide betweenthe carbide-forming metal in the infiltrant material and the diamondgrains within the interstitial regions at least adjacent to a surface ofthe diamond body.

Other aspects and advantages of the invention will be apparent from thefollowing description and the appended claims.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is schematic microstructural view taken of a thermally stableregion of a diamond construction of this invention;

FIGS. 2A to 2E are perspective views of different compact embodimentscomprising diamond constructions of this invention;

FIG. 3 is a perspective view of a diamond construction of this inventionafter a process step where a catalyst material has been removed from aregion of the construction;

FIG. 4 is a cross-sectional side view of the construction of FIG. 3;

FIG. 5 is a schematic microstructural view taken of a section of thediamond construction where the catalyst material has been partiallyremoved therefrom;

FIG. 6 is a perspective view of a diamond construction of this inventionafter a process step where an infiltrant material has been introducedinto the construction after partial removal of the catalyst material;

FIGS. 7A and 7B are cross-sectional side views of a diamond constructionof this disclosure;

FIGS. 8A and 8B are cross-sectional side views of a diamond constructionof this disclosure;

FIGS. 9A and 9B are cross-sectional side views of a diamond constructionof this disclosure;

FIG. 10 is a perspective side view of an insert, for use in a rollercone or a hammer drill bit, comprising the diamond constructions of thisinvention;

FIG. 11 is a perspective side view of a roller cone drill bit comprisinga number of the inserts of FIG. 10;

FIG. 12 is a perspective side view of a percussion or hammer bitcomprising a number of inserts of FIG. 10;

FIG. 13 is a schematic perspective side view of a diamond shear cuttercomprising the diamond constructions of this invention; and

FIG. 14 is a perspective side view of a drag bit comprising a number ofthe shear cutters of FIG. 13.

DETAILED DESCRIPTION

Polycrystalline diamond (PCD) constructions of the present disclosuremay include a diamond body (of diamond particles bonded together) thatpossesses a gradient structure. Specifically, the diamond body maypossess at least two regions therein, a first region (thermally stableregion) that extends from at least a portion of an upper surface intothe diamond body and a second region that extends upwards into thediamond body from the surface opposing the upper surface (i.e., from asubstrate). The first, thermally stable region may have a materialmicrostructure having a matrix first phase of bonded-together diamondcrystals, and a plurality of second phases interposed within the matrixfirst phase. The plurality of second phases in the first region mayinclude a material that is a reaction product formed between a reactive,carbide-forming material and the diamond crystals at high pressure/hightemperature (HPHT) conditions to form a metal carbide, as well as aninert metal component. However, the plurality of second phases withinthe first, thermally stable region are not necessarily all identical innature. Rather, embodiments of the present disclosure may provide for agradient of compositional makeup for the plurality of second phasesthrough the first, thermally stable region. In an example embodiment,the plurality of second phases occupy voids that previously existedwithin the interstitial regions of the material microstructure and thatwere formed by removing a catalyst material therefrom. The second phasemay or may not occupy all of the voids in the thermally stable region.

The second region of the diamond body may include a materialmicrostructure having a matrix first phase of bonded-together diamondcrystals and a plurality of second phases interposed within the matrixfirst phase, where the second phase is occupied by one or more GroupVIII metals. Further, one skilled in the art, upon reading the teachingscontained in the present disclosure, should also appreciated that theremay be some gradual transition between the first region and the secondregion, and that there may not necessarily be a clear demarcationbetween the two regions (in their second phases).

In an example embodiment, the thermally stable region is substantiallyfree of the solvent catalyst material that was used to initially sinterthe diamond grains together during a first HPHT process to form thediamond body. Further, the metal carbide and/or inert metal used to fillthe voids and the diamond grains may have one or more thermalcharacteristics that more closely match the bonded-together diamondcrystals then those of the catalyst material that was removed from thethermally stable region. Additionally, it may be desirable that themetal carbide and/or inert metal operate to elevate the graphitizationtemperature of the thermally-stable region when compared to thegraphitization temperature of such region as previously occupied withthe catalyst material.

In an example embodiment, the thermally stable region is formed by firstremoving the catalyst material used to form the diamond body therefrom,and then filling all or a portion of the resulting empty voids or poresthrough the use of an infiltrant material that infiltrates into porespreviously occupied by the catalyst material. In accordance withembodiments of the present disclosure, the infiltrant material may be analloy of two or more metals, one metal being selected from a first metaltype that is inert/nonreactive to diamond (at the infiltrationconditions) and a second metal being selected from a second metal typethat is a reactive, carbide-former. The inert metal component in theinfiltrant alloy may help provide for the desired infiltration of thereactive carbide-former, and/or help reduce the melting temperature ofthe reactive material to facilitate infiltration at a desiredtemperature, and/or help control the rate of reaction between thecarbide-former metal and the diamond crystals (i.e., to form a metalcarbide). Further, as a molten infiltrant alloy penetrates into adiamond body, the carbide-former metal may react with the diamondcrystals, causing formation of metal carbide particles along thesurfaces of the diamond crystals and gradual depletion in the amount ofcarbide-forming metal present in the molten infiltrant as it penetrateddeeper into the diamond body. The plurality of second phases (betweenthe interbonded diamond crystals) may thus include the formed metalcarbide, as well as the inert metal. However, as the molten infiltrantpenetrates to deeper depths, the relative amount of metal carbide withinthose second phases decreases as the relative amount of inert metalwithin those second phases increases. Thus, in this manner, a gradientstructure within the thermally stable region of the diamond body isformed.

As used herein, the term “PCD” is used to refer to polycrystallinediamond that has been formed, at high pressure/high temperature (HPHT)conditions, through the use of a metal solvent catalyst, such as thosemetals included in Group VIII of the Periodic table, that remains withinthe material microstructure. However, the diamond regions of the presentdisclosure having the presently described infiltrant material thereinare not referred to as being PCD because they do not include thecatalyst material that was used to initially sinter the diamond body.Further, these regions are also unlike conventional thermally stablediamond materials because they do not include a plurality of unfilledinterstitial voids or pores resulting from the removal of the catalystmaterial therefrom.

However, in accordance with various embodiments of the presentdisclosure, the diamond bodies or constructions described herein mayinclude a region substantially free of the catalyst material (and filledwith an infiltrant material), a region of conventional PCD that includesthe catalyst material that was used to sinter the diamond body, and anoptional layer or region of material disposed over a surface of thediamond region substantially free of the catalyst material. In otherembodiments, the diamond bodies or constructions may include a regionsubstantially free of the catalyst material (and filled with aninfiltrant material), a region of conventionally diamond crystals and aGroup VIII metal from the Periodic table that was not used to sinter thediamond body, and an optional layer or region of material disposed overa surface of the diamond region substantially free of the catalystmaterial.

The presence of the PCD region or diamond region including the GroupVIII metal that was not used to sinter the diamond body, and/or thelayer of material disposed over the diamond region substantially free ofthe catalyst material may assist in imparting desired properties ofhardness/toughness and impact strength to the diamond body that areotherwise lacking in conventional thermally stable diamond materialsthat have been rendered thermally stable by having substantially all ofthe solvent catalyst material removed therefrom and not replaced. Thepresence such a PCD region, or diamond region including the Group VIIImetal not used to sinter the diamond body, in the diamond body may alsoallow diamond constructions of this disclosure to be permanently joinedto a desired substrate, thereby facilitating attachment of the resultingdiamond compact to a desired end use cutting and/or wear and/ormachining device, e.g., a bit used for drilling subterranean formations,by conventional means such as by brazing, welding and the like.

In an example embodiment, diamond constructions of the presentdisclosure may be made by treating a PCD body or compact to remove atleast a portion of the catalyst material that was used to sinter thesame during HPHT processing from a region thereof, and then filling atleast a portion of the region removed of the catalyst material with ainfiltrant material, such as those briefly mentioned above and describedin more details below. When starting with a preformed PCD compact, thediamond constructions of the present disclosure may be formed using asingle HPHT process, and when starting without a preformed PCD compact,the diamond constructions of the present disclosure may be formed usingtwo HPHT processes; namely, a first HPHT process to form the PCDcompact, and a second HPHT process to form the desired diamondconstruction.

FIG. 1 illustrates a region of a diamond construction 10 of thisdisclosure that is substantially free of the catalyst material that wasused to initially sinter the diamond body, and that has a resultingmaterial microstructure comprising a polycrystalline diamond matrixfirst phase 12 including a plurality of bonded-together diamond crystalsformed at HPHT conditions. A plurality of second phases 14 are disposedinterstitially between the bonded together diamond crystals and includesan inert metal component and a reaction product formed by the reactionof the diamond in the first phase with a reactive, carbide-formingmaterial. In a particular embodiment, the reaction product may operatepartially fill the voids or pores left in the interstitial regionscaused by the removal of the catalyst material (the remaining occupiedby the inert metal component of the infiltrant) and impose a desiredcompressive stress onto the surrounding polycrystalline diamond matrixphase.

As described in greater detail below, the infiltrant alloy selected toform the second phases within this particular diamond-body region is onethat includes at least two metals, one metal being a reactive,carbide-forming material useful for forming a carbide reaction productwith carbon from the bonded-together diamond grains in this region, andthe other metal being an inert species at the infiltration conditionsand/or during use. A feature of the second regions is that they do notinclude or are substantially free of the catalyst material that wasinitially used to sinter the polycrystalline diamond matrix phase. Asused herein, the term “catalyst material” is understood to refer tothose materials that were initially used to sinter the PCD material,i.e., to facilitate the bonding together of the diamond crystals in thediamond body at HPHT conditions, and does not include materials that maybe added subsequent to the sintering of the diamond body, e.g., in theform of an infiltrant or the components of the infiltrant to form thesecond phases.

As noted above, in an example embodiment, the infiltrant material usedto fill the second phases may be provided in the form of an alloycomprising a carbide-forming metal and an inert metal that facilitatesinfiltration and/or that reduces the temperature needed to achievedesired infiltration during HPHT processing, without reacting orcatalyzing reactions with diamond. The presence of the metal carbideand/or inert metal within the diamond body may be desired in certainapplications calling for an enhanced degree of mechanical strength,e.g., strength and/or toughness, within the particular diamond regionsubstantially free or devoid of the catalyst material. Further, theinfiltrant material may be one that is selected to shift upwardly thegraphitization temperature of the resulting diamond region containingthe same, thereby operating to improve the thermal stability of thediamond construction. Additionally, the non-reactive/inert component ofthe infiltrant alloy may be selected to aid in diffusion or penetrationof the carbide-forming metal into the voids in the diamond matrix phasewithout prematurely clogging the voids by carbide precipitation, butallowing for the desired speed of reaction between diamond and thecarbide-forming metal. Use of an inert metal may also allow for themetal to remain in the second phase whilst still minimizing anypotential for thermal degradation. Additionally, the presence ofcombination of a carbide-forming metal and an inert metal in theinfiltrant may allow for the formation of a gradient within the secondphases of the thermally stable region to help provide the desiredhardness/toughness properties.

Accordingly, referring still to FIG. 1, the material microstructure ofthis diamond region devoid of the catalyst material includes a firstmatrix phase of bonded-together diamond grains 12, and a plurality ofsecond phases 14 disposed within interstitial regions of the matrix. Thereaction product between the diamond grains and the carbide-formingmetal is formed within the second phases, which is also where the inertmetal may remain. In a particular embodiment, the metal carbide and/orthe inert metal fill all or a significant population of the of voids orpores resulting from the removal of the catalyst material.

Diamond grains useful for forming the diamond body during the HPHTprocess include diamond powders having an average diameter grain size inthe range of from submicrometer in size to 0.1 mm, and more preferablyin the range of from about 0.001 mm to 0.08 mm. The diamond powder maycontain grains having a mono or multi-modal size distribution. Forexample, the diamond powder may comprise a multimodal distribution ofdiamond grains comprising about 80 percent by volume diamond grainssized 20 to 30 micrometers, and 20 percent by volume diamond grainssized 1 to 6 micrometers. In an embodiment for a particular application,the diamond powder may have an average particle grain size of from about5 to 30 micrometers. However, it is to be understood that the diamondgrains having a grain size greater than this amount, e.g., greater thanabout 30 micrometers, may be used for certain drilling and/or cuttingapplications. In the event that diamond powders are used havingdifferently sized grains, the diamond grains are mixed together byconventional process, such as by ball or attrittor milling for as muchtime as necessary to ensure good uniform distribution.

The diamond powder used to prepare the diamond body may be syntheticdiamond powder. Synthetic diamond powder is known to include smallamounts of solvent metal catalyst material and other materials entrainedwithin the diamond crystals themselves. Alternatively, the diamondpowder used to prepare the diamond body may be natural diamond powder.The diamond grain powder, whether synthetic or natural, may be combinedwith a desired amount of solvent catalyst to facilitate desiredintercrystalline diamond bonding during HPHT processing.

Suitable catalyst materials useful for forming the PCD body may includemetal solvent catalysts selected from Group VIII of the Periodic table(including cobalt, nickel, and iron), with cobalt, (Co) being the mostcommon, and mixtures or alloys of two or more of these materials. Thediamond grain powder and catalyst material mixture may comprise 85 to95% by volume diamond grain powder and the remaining amount catalystmaterial. In certain applications, the mixture may comprise greater than95% by volume diamond grain powder. Alternatively, the diamond grainpowder may be used without adding a solvent metal catalyst inapplications where the solvent metal catalyst is provided byinfiltration during HPHT processing from a substrate positioned adjacentthe diamond powder volume.

In certain applications it may be desired to have a diamond bodycomprising a single diamond-containing volume or region, while in otherapplications it may be desired that a diamond body be constructed havingtwo or more different diamond-containing volumes or regions. Forexample, it may be desired that the diamond body include a firstdiamond-containing region extending a distance from a working surface,and a second diamond-containing region extending from the firstdiamond-containing region to the substrate. Such diamond-containingregions may be engineered having different diamond volume contentsand/or be engineered having differently sized diamond grains. It is,therefore, understood that the diamond constructions of this disclosure(including either the first, thermally stable region and/or the secondregion) may include one or multiple regions comprising different diamonddensities and/or diamond grain sizes as called for by a particularcutting and/or wear end use application.

In an example embodiment, the diamond grain powder may be cleaned, andloaded into a desired container adjacent a desired substrate forplacement within a suitable HPHT consolidation and sintering device. Anadvantage of combining a substrate with the diamond powder volume priorto HPHT processing may be that the resulting compact includes thesubstrate bonded thereto to facilitate eventual attachment of thecompact to a desired wear and/or cutting device by conventional method,e.g., by brazing or welding or the like. In an example embodiment, thesubstrate includes a metal solvent catalyst for catalyzingintercrystalline bonding of the diamond grains by infiltration duringthe HPHT process.

Suitable materials useful as substrates include those materials used assubstrates for conventional PCD compacts, such as those formed fromceramic materials, metallic materials, cermet materials, carbides,nitrides, and mixtures thereof. In a particular embodiment, thesubstrate may be provided in a preformed state and includes a metalsolvent catalyst capable of infiltrating into the adjacent diamondpowder mixture during HPHT processing used to initially form the PCDbody to facilitate sintering and providing a bonded attachment with theresulting sintered body. Alternatively, the substrate may be provided inthe form of a green state, i.e., unsintered, part, or may be provided inthe form of a powder volume. It may desired that the metal solventcatalyst disposed within the substrate be one that melts at atemperature above the temperature used during the subsequent process ofprocess of introducing the infiltrant material into the designateddiamond body region and reacting the reactive material therein to formthe desired reaction product. Suitable metal solvent catalyst materialsinclude those selected from Group VIII elements of the Periodic table. Apreferred metal solvent catalyst is cobalt (Co), and a preferredsubstrate material comprises cemented tungsten carbide (WC—Co).

The HPHT device may be activated to subject the container and itscontents to a desired HPHT condition to consolidate and sinter thediamond powder mixture to form PCD. In an example embodiment, the devicemay be controlled so that the container is subjected to a HPHT conditioncomprising a pressure in the range of from 5 to 7 GPa and a temperaturein the range of from about 1,320 to 1,600° C., for a sufficient periodof time. During this HPHT process, the catalyst material present in thesubstrate melts and infiltrates the diamond grain powder to facilitateintercrystalline diamond bonding and bonding of the resulting diamondbody to the substrate. During formation of the diamond body, thecatalyst material migrates into interstitial regions within the diamondbody disposed between the diamond grains.

FIG. 2A illustrates a PCD compact 16 formed according to this processcomprising a diamond body 18 formed from PCD and a substrate 20 attachedthereto. The diamond body includes a working (upper and side) surface 22positioned along a desired outside surface portion of the diamond body18. In the example embodiment illustrated in FIG. 2A, the diamond bodyand substrate are each configured in the form of generally cylindricalmembers, and the working surface is positioned along an axial end acrossa diamond table of the diamond body 18.

It is to be understood that PCD compacts useful for forming diamondconstructions of this invention may be configured differently, e.g.,having a diamond body mounted differently on the substrate and/or havinga working surface positioned differently along the diamond body and/ordifferently relative to the substrate. FIGS. 2B to 2E illustrate PCDcompact embodiments that are configured differently than thatillustrated in FIG. 2A for purposes of reference, and that are alluseful for forming diamond constructions of this disclosure.

In an example embodiment, once formed, the diamond body 18 is treated toremove the catalyst material used to initially sinter and form thediamond body from a selected region thereof. This may be done, forexample, by removing substantially all of the catalyst material from theselected region by suitable process, e.g., by acid leaching, aqua regiabath, electrolytic process, chemical processes, electrochemicalprocesses or combinations thereof.

It is desired that the selected region where the catalyst material isremoved, or the region of the diamond body that is devoid orsubstantially free of the catalyst material, be one that extends adetermined depth from a surface of the diamond body independent of thediamond body orientation. Again, it is to be understood that the surfacefrom which the catalyst material is removed may include more than onesurface portion of the diamond body. In an example embodiment, it isdesired that the region rendered substantially free of the catalystmaterial extend from a surface of the diamond body an average depth ofat least about 0.010 mm. The exact depth of this region is understood tovary depending on such factors as the diamond density, the diamond grainsize, and the ultimate end use application.

In an example embodiment, the treated region (and/or first, thermallystable region) may extend from the surface of the diamond body to anaverage depth that may broadly range from 0.01 to 3.0 mm, that may beless than about 0.1 mm for certain applications, or that may be greaterthan about 0.1 mm for other applications. In an example embodiment, theregion that is rendered substantially free of the catalyst material (andsubsequently infiltrated with an infiltrant material) extends from thesurface of the diamond body an average depth of from about 0.05 mm toabout 0.5 mm. As noted above, for more aggressive tooling, cuttingand/or wear applications, the region rendered substantially free of thecatalyst material may extend a depth from the working surface of greaterthan about 0.1 mm, e.g., up to 0.2 mm, 0.3 mm, 0.5 mm, or even 1.0 mm.

The diamond body may be machined, e.g., by OD grinding and/or polishing,to its approximate final dimension prior to treatment. Alternatively,the diamond-PCD compact may be treated first and then machined to itsfinal dimension. The targeted region for removing the catalyst materialmay include any surface region of the body, including, and not limitedto, the diamond table, a beveled section extending around and defining acircumferential edge of the diamond table, and/or a sidewall portionextending axially a distance away from the diamond table towards or tothe substrate interface. In a particular embodiment, the diamond bondedbody is machined finished to its approximate final dimension prior totreatment, which may or may not include the formation of a beveledsection as noted above.

It is to be understood that the depth of the region removed of thecatalyst material is represented as being a nominal or average value,e.g., arrived at by taking a number of measurements at preselectedintervals along this region and then determining the average value forall of the points. The remaining/untreated region of the diamond body isunderstood to still contain the catalyst material and comprises PCD.

Additionally, when the diamond body is treated, it is desired that theselected depth of the region to be rendered substantially free of thecatalyst material be one that allows a sufficient depth of remaining PCDso as to not adversely impact the attachment or bond formed between thediamond body and the substrate. In an example embodiment, it is desiredthat the untreated or remaining PCD region within the diamond body havea thickness of at least about 0.01 mm as measured from the substrate. Itis, however, understood that the exact thickness of the PCD region mayand will vary from this amount depending on such factors as the size andconfiguration of the diamond construction, and the particular diamondconstruction end-use application.

In an example embodiment, the selected region of the diamond body to beremoved of the catalyst material is treated by exposing the desiredsurface or surfaces of the diamond body to acid leaching, as disclosedfor example in U.S. Pat. No. 4,224,380, which is incorporated herein byreference. Generally, after the diamond body or compact is made by HPHTprocess, the identified body surface or surfaces, may be placed intocontact with the acid leaching agent for a sufficient period of time toproduce the desired leaching or catalyst material depletion depth.

Suitable leaching agents for treating the selected region includematerials selected from the group consisting of inorganic acids, organicacids, mixtures and derivatives thereof. The particular leaching agentthat is selected may depend on such factors as the type of catalystmaterial used, and the type of other non-diamond metallic materials thatmay be present in the diamond body In an example embodiment, suitableleaching agents include hydrofluoric acid (HF), hydrochloric acid (HCl),nitric acid (HNO₃), and mixtures thereof.

In an example embodiment, where the diamond body to be treated is in theform of a diamond compact, the compact may be prepared for treatment byprotecting the substrate surface and other portions of the diamond bodyadjacent the desired treated region from contact (liquid or vapor) withthe leaching agent. Methods of protecting the substrate surface includecovering, coating or encapsulating the substrate and portion of PCD bodywith a suitable barrier member or material such as wax, plastic or thelike.

FIGS. 3 and 4 illustrate example embodiments of the diamondconstructions 26 of this disclosure after the catalyst material has beenremoved from a selected region. The construction 26 comprises a treatedregion 28 that extends a selected depth “D” from a surface 30 of thediamond body 32. The remaining region 34 of the diamond body 32,extending from the treated region 28 to the substrate 36, comprises PCDhaving the catalyst material intact. As discussed above, the exact depthof the treated region having the catalyst material removed therefrom canand will vary.

Additionally, as mentioned briefly above, it is to be understood thatthe diamond constructions described above and illustrated in FIGS. 3 and4 are representative of a single embodiment of this disclosure forpurposes of reference, and that diamond constructions other than thatspecifically described and illustrated are understood to be within thescope of this invention. For example, diamond constructions comprising adiamond body having a treated region and then two or more other regionsare possible, wherein a region interposed between the treated region andthe region adjacent the substrate may be a transition region having adifferent diamond density and/or formed from diamond grains sizeddifferently from that of the other diamond-containing regions.

FIG. 5 illustrates the material microstructure 38 of the diamondconstructions of this disclosure and, more specifically, the materialmicrostructure taken from a section of the treated region. The treatedregion comprises a matrix phase of intercrystalline bonded diamondformed from a plurality of bonded-together diamond grains 40. Thetreated region also includes a plurality of interstitial regions 42interposed between the diamond grains or crystals that are nowsubstantially free of the catalyst material, i.e., that are now voids orempty pores. The treated region is shown to extend a distance “D” from asurface 44 of the diamond-boded body, wherein the interstitial regions42 below the depth D are understood to include the catalyst material.

In one example embodiment, once the catalyst material is removed fromthe targeted region, the resulting diamond body is further processed tointroduce an infiltrant material, as disclosed herein, to effect adesired reaction between the reactive, carbide-forming material and thediamond in the targeted region, form a gradient structure, and tooptionally provide a layer of the reactive material and/or reactantproduct on a surface of the diamond body.

As discussed above, the infiltrant alloy material includes one or morereactive materials, and one or more other nonreactive and inertmaterials (does not react with the diamond crystals or catalyticallyfunction to cause diamond bond formation). In a particular embodiment,the infiltrant alloy material is selected from a combination of one ormore reactive, carbide-forming metals with one or more nonreactive,inert metals that when combined has a melting temperature below that ofthe catalyst material used to form the diamond body and that stillexists in the PCD region of the diamond body. The nonreactive, inertmaterial also aids in the process of infiltrating the reactive materialinto the diamond body, and in an example embodiment, may be selected tocontrol the rate of reaction between the reactive material and thediamond during the process of infiltration to thereby improve the degreeof infiltration into the diamond region by the infiltrant material.

Example nonreactive, inert metals useful for forming the infiltrantalloy material of the present disclosure may include one or more metalsselected from Cu, Ag, Au, Pd, and Pt. However, other metals that arenon-reactive or non-catalyzing with carbon may also be used. It may bedesired that the amount of the nonreactive, inert metal in theinfiltrant alloy be sufficient to reduce the melting temperature of theinfiltrant material, to a temperature below that of the catalystmaterial, and to provide a degree of control over the reactive materialreaction rate, but yet minimize the tendency for such nonreactivematerial to act as a catalyst to the diamond during infiltration and/orduring subsequent use of the diamond body in a wear or cuttingoperation.

It is theorized that the carbide-forming metal used in the infiltrantmaterial reacts with the diamond crystals to form a barrier on thesurface of diamond crystals. Thus, the plurality of second regions arebelieved to contain a reaction product (metal carbide) along an outerboundary adjacent the surrounding diamond crystals, and an inner portionthat is surrounded by reaction product (metal carbide) that contains thenonreactive, inert metal. Additionally, the amount of the nonreactivematerial that is used may also be selected such that its presence withinthe plurality if second regions will not create a thermal expansiondifferential within the construction during use that will adverselyimpact performance or service life of the construction. Additionally,one skilled in the art, upon reading the teachings contained in thepresent application, would appreciate that the relative amount of metalcarbide that forms in the second phases decreases extending away fromthe surface from which the infiltrant material infiltrated, whereas theinert metal increases in relative amount.

Preferably, the carbide-forming metal included in the infiltrantmaterial is one that reacts with the diamond to form a reaction producttherewith. In a preferred embodiment, the carbide-forming metal is onethat is capable, alone or when combined with another material, ofmelting and reacting with diamond in the solid state during processingof the diamond materials at a temperature that is below the meltingtemperature of the catalyst material in the PCD region of the diamondbody. Additionally, such carbide-forming metals would include thosethat, upon reacting with the diamond, form a compound having acoefficient of thermal expansion that is relatively closer to that ofdiamond than that of the catalyst material used to initially sinter thediamond body. Additionally, it is also desired that the compound formedby reaction of the reactive material with diamond have significantlyhigh-strength characteristics.

The reactive, carbide-forming metal included in the infiltrant alloy isone that reacts with the diamond to form a reaction product therewith.In a particular embodiment, the reactive, carbide-forming material isone that is capable, alone or when combined with another material, ofmelting and reacting with diamond in the solid state during processingof the diamond materials at a temperature that is below the meltingtemperature of the catalyst material in the PCD region of the diamondbody. Suitable reactive materials useful for forming diamondconstructions of this disclosure may include, for example, Ti, Zr, Nb,Mo, W, Ta, V, Si, Cr, B, Hf, or any other element that will react withthe carbon in the diamond crystals under the HPHT conditions to form ametal carbide. Additionally, such reactive materials would include thosethat, upon reacting with the diamond, form a compound having acoefficient of thermal expansion that is relatively closer to that ofdiamond than that of the catalyst material used to initially sinter thediamond body. Additionally, it may also be desired that the compoundformed by reaction of the reactive material with diamond havesignificantly high-strength characteristics.

In an example embodiment, the infiltrant material may comprise in therange of from about 5 to 40 percent by volume nonreactive, inert metal,e.g., Cu, Ag, Au, Pd, or Pt, and a remainder amount of carbide-formingmetal. It is to be understood that the amount of nonreactant, inertmetal and reactive, carbide-forming metal used to form the infiltrantalloy can and will vary depending on the types of materials used.

In an example embodiment, a treated diamond body (having catalystmaterial removed therefrom) is loaded into a container for placementwithin the HPHT device for HPHT processing. Before being placed into thecontainer, a desired infiltrant material is positioned adjacent asurface of the treated area of the diamond body to facilitateinfiltration into the treated region during the HPHT process. During theHPHT process, the infiltrant material melts and infiltrates into theadjacent surface of the treated region of the diamond body and partiallyor completely fills the plurality of voids existing in the interstitialregions. As the infiltrant material infiltrates into the diamond body,the reactive, carbide-forming metal may react with the diamond crystalswithin the polycrystalline matrix phase to form a metal carbide withinthe interstitial regions, thereby forming the plurality of second phaseswithin the material microstructure. Additionally, as the carbide-formingmetal is depleted from the infiltrating phase (due to formation of metalcarbides), the inert metal infiltrates deeper into the diamond body inorder to produce a gradient between the infiltrant metal alloyingcomponents. Specifically, as the molten infiltrant alloys sweeps throughthe diamond body, the carbide-forming metal reacts with diamond, forminga metal carbide particles attached to the diamond crystals. As a resultof this reaction, as the inert alloy penetrates into diamond body, themore depleted it becomes of the carbide-forming metal and, consequently,more rich in the inert metal component, leading to a gradient structurehaving more metal carbide and less inert metal close to the diamond bodyupper surface and less (or practically no) metal carbide and more inertmoving away from the upper surface into the diamond body.

During the infiltration, the HPHT process may be conducted at atemperature sufficient to melt the infiltrant material, at a pressurehigh enough to keep the diamond thermodynamically stable, (this pressuremay be lower than that used during the process of initially forming thediamond body due to the fact that this operation is carried out at lowertemperatures than the forming process), and for a sufficient period oftime, e.g., from about 1 to 20 minutes. This time period should besufficient to melt all of the infiltrant material, to allow thecarbide-forming metal to infiltrate the treated region of the diamondbody to the desired extent react with the diamond crystals in thisregion to form the desired metal carbide occupying the plurality ofsecond phases, and to allow the inert metal to infiltrated the treatedregion of the diamond body to the desired extent. Further, the HPHTtemperatures may range from about 800 to 1700° C. (and from 900 to 1500°C. in a particular embodiment) depending on the selection of theinfiltrant material. Further, the temperatures applied may depend, forexample, on whether the diamond body being infiltrant has been renderedsubstantially free of the catalyst material or whether the catalystmaterial remains in a particular depth of the diamond body, and whetherthe diamond body being infiltrated is pre-attached to a substrate. Ifthe substantially all of the interstitial regions are empty and thediamond body is not yet attached to a substrate, the temperatures mustbe raised sufficiently high (e.g., over 1450° C.) to allow for meltingof the cobalt (or other Group VIII metal) and partial infiltration intothe diamond body so that the substrate may be bonded thereto. In such aninstance the temperature profile may include either a smooth increasethrough the melting temperatures of both infiltrants or may include atwo-step process whereby the there is an intermediate hold stop.

Additionally, to create the gradient structure within the first,thermally stable region, the temperatures during the HPHT process may becontrolled to allow for both infiltration as well as reaction.Specifically, the temperature increase (upon reaching the melting of theinfiltrant) must be slow enough to achieve a gradient and must be fastenough to avoid clogging of the pores by the metal carbide. Thus, uponreaching the melting of the infiltrant, the temperature may increase ata rate between about 1 and 100° C./sec, and between about 2 and 50°C./sec or between about 5 and 25° C./sec in other embodiments.

While particular HPHT pressures, temperatures and times have beenprovided, it is to be understood that one or more of these processvariables may change depending on such factors as the type and amount ofmaterials used to form the infiltrant material, and/or the type ofdiamond body. It may generally be desired, however for this particularembodiment, that the HPHT process for infiltrating the infiltrantmaterial be below the melting temperature of the catalyst materialremaining in the PCD region of the diamond body, to permit theinfiltrant material to infiltrate and react with the diamond crystalswithout the catalyst material in the PCD region infiltrating into thetreated region.

The infiltrant material, when introduced by HPHT process, may beprovided in the form of a solid object such as a metal alloy foil, ormay be provided in the form of a powder that is positioned adjacent asurface of the treated region of the diamond body, thereby infiltratingduring the HPHT process into the treated region to fill the voids andpores disposed therein formed by removal of the catalyst material.

Other methods of introducing the infiltrant material into the diamondbody may be by coating or partially infiltrating the body surface andvoids in the treated region prior to placing the body in the HPHT deviceby processes such as Chemical Vapor Deposition (CVD) or Physical VaporDeposition (PVD). Other methods such as wet chemical plating, orelectro-deposition, or filling the voids with the infiltrant materialprovided in a liquid phase, e.g., via an organic or inorganic liquidcarrier may also be employed. Such methods of introducing the infiltrantmaterial to the diamond body, i.e., to the treated region, may be usedas an alternative or in addition to introducing the infiltrant materialduring the HPHT process.

When the infiltrant material is provided in the form of a coating priorto placement of the diamond body in the HPHT device, the infiltrantmaterial may achieve a desired degree of penetration into the treatedmaterial to fill the empty voids within the treated region. The exactdepth of penetration can and will vary on a number of factors such asthe type of coating technique used, the types of materials used to formthe infiltrant material, and the type of material used to form thediamond body. An advantage of using such a coating technique tointroduce the infiltrant material into the diamond body is that it mayresult in a smaller volume change during HPHT processing, which wouldalso provide a more predictable and controlled HPHT process andresulting product.

A further advantage of introducing some or all of the infiltrantmaterial in this manner is that it may reduce the amount of entrainedgas in the product formed during the HPHT process, which would also helpachieve a compact having a higher material density and possibly havingbetter heat transfer properties, i.e., resulting from reducing the totalvolume of unfilled void space within the construction, thereby reducingthe amount of heat transfer by convection and increasing the amount ofheat transfer by conduction, which can operate to increase the overallheat transfer capability of the resulting diamond body. Reducing theamount of entrained gas within the compact is also desired during theHPHT process as such gas operates to potentially reduce the extent ofdesired chemical reactions between the reactive material and thepolycrystalline phase material.

If the infiltrant material is applied to the diamond body prior to HPHTprocessing, the resulting diamond body is then subjected to the HPHTprocess as described above to achieve any further desired extent ofinfiltration in addition to producing the desired reaction productbetween the reactive material and the polycrystalline matrix phasematerial.

Alternatively, the infiltrant material may be provided in the form of aslurry or liquid or a gel, e.g., in the form of a sol gel, polymermaterial or the like, comprising the desired alloy. In an exampleembodiment, when the infiltrant material is provided in the form of aliquid or sol gel, it may be introduced into the diamond body at arelatively low temperature without the need to elevated temperature. Inan example embodiment, the infiltrant material may be introduced intothe diamond body at a temperature of at least 800° C. for a sufficientamount of time to provide a desired degree of infiltration and reactionproduct without having to use elevated pressure. Accordingly, using aninfiltrant material in such a form enables infiltration to take place bysubjecting the diamond body to the liquid infiltrant material, e.g., byimmersion or the like, under elevated temperature conditions, e.g., byusing an autoclave or the like. The diamond body may then be placed in avacuum furnace and the desired reaction product, e.g., the metalcarbide, may be formed at a temperature of at least about 700° C.

In one embodiment, the infiltrant material may infiltrates into theentire diamond body treated region, thereby providing a thermally stablediamond region extending a desired depth from the working surface. Incertain situations, however, it may be difficult for the infiltrantmaterial to infiltrate and fill the entire treated region, in which casea portion of the treated region may not be filled with the infiltrantmaterial and such portion may still include some population of unfilledor partially filled voids or pores. Alternatively, it may beintentionally desired that some population of the voids in the treatedregion remain unfilled. This may be desired, for example, for thepurpose of providing a thermally and/or electrically insulating layerwithin the diamond body. Accordingly, it is to be understood thatplurality of voids or empty pores existing in the diamond body treatedregion may be completely or only partially filled with the infiltrantmaterial (the inert metal and/or the metal carbide reaction product).

In a particular embodiment, all or a substantial portion of the voids orpores in the treated region are filled with the infiltrant alloy (orconstituent components thereof), thus all or a substantial population ofthe voids or empty pores existing in this region will contain thereactive material (in the form of a metal carbide) and/or the inertmetal. It is understood that in those cases that the pores or emptyvoids that are filled or partially filled with such infiltrant materialmay, in addition to the metal carbides and/or inert metal, the secondphases may also include some unreacted reactive, carbide-forming metal.However, in a preferred embodiment, substantially all of thecarbide-forming material in the infiltrant material is reacted.

This reaction between the carbide-forming metal and carbon present inthe diamond crystals may be desired because the reaction product, themetal carbide, may have a coefficient of thermal expansion that iscloser to diamond than that of the catalyst material that was initiallyused to sinter the diamond body and that remains within the PCD regionof the diamond body. Additionally, the presence of the metal carbide mayprovide improved properties of strength and fracture toughness to thediamond body when compared to the preexisting state of the treatedregion of the diamond body comprising empty voids or pores.

Further, the presence of metal carbide and/or inert metal in the secondphases adjacent the interface between the diamond body region comprisingthe same and the PCD region may operate to minimize or dilute theotherwise large difference in the coefficient of thermal expansion thatwould otherwise exist between these regions, thereby operating tominimize the development of thermal stress in at the interface betweenthe treated and untreated diamond body regions, thereby improving theoverall thermal stability of the entire diamond body.

It is to be understood that the amount of the infiltrant material usedfor forming diamond constructions of this invention can and will varydepending on such factors as the size and volume content of the diamondcrystals in the treated region, the volume of the treated diamond regionto be infiltrated, the type of materials used to form the infiltrantmaterial, the desired layer thickness of reactive material internallywithin the region on the diamond crystals, the formation and thicknessof any material layer on a surface of the diamond body, in addition tothe particular end-use application for the resulting diamondconstruction. In one embodiment, the amount of the infiltrant materialused may be sufficient to infiltrate a desired volume of the treatedregion and form the desired reaction product having a desired thicknesswithin the interstitial regions of the treated region. As note above,optionally, the amount of infiltrant material used may also take intoaccount the formation of a material layer having a desired thicknessformed on at least a portion of the diamond body surface.

In an example embodiment, the source of the infiltrant alloy is providedin the form of a metal alloy disk. However, other geometric shapes ofalloy may be used to vary the infiltration profile in the diamond body,as described in FIGS. 8A-9B. As noted above, the amount ofcarbide-forming metal that is used may influence the depth ofinfiltration, the extent of diamond bonding via the resulting reactionproduct, and the thickness any material layer formed on at least aportion of the diamond body surface. In an example embodiment, where thediamond body has a diameter of approximately 16 mm and the leach depthis approximately 0.08 mm, the volume of the infiltrant material neededto fill the interstitial regions will depend on the extent of theporosity within this region. As an example, when the porosity in suchexample is approximately 5 percent, approximately 0.8 cubic mm of theinfiltrant material may be used, and when the porosity in such exampleis approximately 10 percent, the amount of infiltrant material will begreater by a factor of 2 or 1.6 cubic mm.

Although formation of the thermally stable diamond region has beendescribed by using a single infiltrant material, it is to be understoodthat such diamond region may be formed by using two or more infiltrantmaterials. For example, a first infiltrant material comprising a firstreactive material can be used to occupy some population of the voidsdisposed within the treated diamond body, and a second infiltrantmaterial comprising second reactive material can be used to occupy someother population of the voids. In such example embodiment, the firstinfiltrant material may be used to fill the voids in one particularregion, e.g., a region nearest the diamond-body surface, while theinfiltrant reactive material may be used to fill the voids in anotherparticular region, e.g., a region adjacent the PCD region. In additionto using two or more infiltrant materials to form different volumeswithin the thermally stable region, the infiltrant material may becombined so that they occupy the same volume within the thermally stableregion.

It is to be understood that the particular infiltrant materials that areused in each such embodiments may be tailored to provide the desiredthermal and/or mechanical properties for each such portion of thethermally stable region, thus providing a further ability to customizethe performance properties of the thermally stable region in the diamondbody to meet the specific demands of a particular end-use application.

In another example embodiment, diamond constructions are prepared byremoving the catalyst material used to form the diamond body completelytherefrom rather than by removing the catalyst material from only atargeted region of the diamond body. In such embodiment, a diamond bodycomprising PCD is formed in the manner described above by HPHT process,and the entire so-formed PCD body is treated to remove the catalystmaterial therefrom so that the resulting entire diamond body issubstantially free of the catalyst material.

In such embodiment, the resulting catalyst free diamond body is thensubjected to a treatment whereby the infiltrant material (as discussedabove) is introduced into a region of the body to occupy the empty poresor voids in such region, and to form the desired reaction product withinthe pores. Additionally, the catalyst free diamond body is treated sothat the empty pores or voids in another region of the body are filledwith another infiltrant, wherein such other infiltrant is different fromthat used to produce the reaction product.

The other infiltrant that is used to fill the pores in the other regionof the diamond body may be formed from materials that assist inproviding a desired degree of fracture toughness and mechanical strengthto the diamond body. Further, it may be desirable that such otherinfiltrant be one that is capable of providing a bonded attachment witha desired substrate to form a diamond compact. Suitable materials thatmay be used as the other infiltrant includes those in Group VIII of thePeriodic table and alloys thereof, including cobalt, iron, and nickel.Other suitable materials that may be used as the other infiltrant caninclude nonrefractory metals, ceramic materials, cermet materials, andcombinations thereof. The other infiltrant may or may not include aconstituent that can react with the diamond within the diamond body toform a reaction product, i.e., the other infiltrant may include acarbide former or the like. In a particular embodiment, the otherinfiltrant is cobalt. A feature of the material that is used to form theother infiltrant is that it may have a melting temperature higher thanthat of the infiltrant used to introduce the reactive material to formthe reaction product.

Such other example embodiment diamond body is formed by treating theentire diamond body to remove the catalyst material therefrom by thesame method as described above, e.g., by acid leaching process of thelike. Where the PCD body includes a substrate, the substrate may beremoved prior to treatment to facilitate the catalyst removal process,or may be removed and/or allowed to fall away from the diamond bodyafter the treatment, by virtue of the catalyst material no longer beingpresent to provided a bonded attachment therebetween.

The resulting diamond body is substantially free of the catalystmaterial and is loaded into a container for subsequent HPHT processing.A source of the infiltrant is positioned adjacent a desired surface ofthe diamond body for receiving the infiltrant therein, and a source ofthe other infiltrant is positioned adjacent another desired surface ofthe diamond body for receiving the other infiltrant therein. In anexample embodiment, the source of the infiltrant used for introducingthe reactive metal and inert metal may be in the same form as thatdescribed above, and in an example embodiment, is provided in the formof a foil. In an example embodiment, the source of the other infiltrantmay be provided in the form of a substrate, that can be in the same formand/or formed from the same materials described above for forming thePCD diamond body. In an example embodiment, a WC—Co substrate is used asthe source of the other infiltrant, wherein the other infiltrant iscobalt.

In an example embodiment, the infiltrant may be positioned to coverworking surfaces of the diamond body, which may include the same diamondbody surfaces described above, e.g., including the diamond table, wallsurface, and/or beveled edge. In an example embodiment, the otherinfiltrant is positioned along a surface of the diamond body where adesired attachment to a substrate is desired, which can vary dependingon the particular end-use application.

The container is loaded into an HPHT device and the device is operatedto cause a sequential melting and infiltration of the infiltrantmaterial comprising reactive material, and then the melting andinfiltration of the other infiltrant material. The extent ofinfiltration, i.e., the depth of infiltration into the diamond body, bythe infiltrant material comprising the reactive material may becontrolled by the volume of the infiltrant material that is providedand/or by the extent of time that the HPHT process is held at theinfiltrant melting temperature and/or the reaction material reactiontemperature. In an example embodiment, the volume of infiltrant materialthat is provided and/or the duration that the HPHT process is held atthe infiltrant melting temperature is such as sufficient to facilitateformation of a region within the diamond body comprising the reactionproduct within the pores to depth as described above.

The HPHT device may be operated to provide a stepped temperature changefrom a first temperature (to melt the infiltrant comprising the reactionmetal and the inert metal) to a second temperature (to melt the otherinfiltrant) after a sufficient period of time has passed. Alternatively,the HPHT device may be operated to provide a gradient temperature changemoving gradually from the first temperature to a second temperature overa sufficient period of time. In both operations, the sufficient periodof time is that which permits formation of the region within the diamondbody having the reaction product within the pores to the desired depth.

Once the desired depth of the diamond body region comprising thereaction product is formed, the temperature of the HPHT device increasesto the melting temperature of the other infiltrant to cause it to meltand infiltrate into a region of the diamond body not already filled withthe reaction product and inert metal. In the example embodiment wherethe other infiltrant is provided as a constituent of a substrate, suchinfiltration of the other infiltrant operates to form a bondedattachment between the diamond body and the substrate. The HPHT devicemay be operated at this higher temperature for a period of timesufficient to fill the other region of the diamond body and/or to ensurethat a desired attachment bond is formed between the diamond body andthe substrate.

In such example embodiment, the resulting diamond body may include afirst, thermally stable region (having a gradient within theinterstitial regions between the bonded-together diamond of a metalcarbide and the inert metal) and a second region (having the otherinfiltrant material disposed within the interstitial regions). In aparticular embodiment, the other infiltrant material may be a Group VIIImetal (such as Co, Ni, or Fe) that infiltrates into the second regionfrom a substrate to which the diamond body is bonded. There may be someoverlap or an interface between the first and second regions, oralternatively there may be a region within the diamond body between thetwo regions that possesses empty interstitial regions. In an exampleembodiment, the first region extends a depth within the diamond body asdescribed above, and the second region extends between the first regionand the substrate.

FIG. 6 illustrates a perspective view of a thermally stable diamondconstruction 44 constructed according to principles described above.Generally speaking, such construction 44 comprises a diamond body 46having the thermally stable diamond region 48 extending a depth from adiamond body upper surface 49, and a further region 50 that eithercomprises conventional PCD (i.e., that includes the catalyst materialused to form the diamond body) or that comprises a region includinganother infiltrant disposed within the interstitial regions that is notthe catalyst material that was used to initially form the diamond body.The construction 44 may optionally include a material layer 52 that isdisposed along at least a portion of a surface of the diamond body. Itis to be understood, the diamond constructions of this disclosure may beformed with or without the material layer 52, depending on theparticular end-use application. The material layer 52 is formed from theinfiltrant material and, in an example embodiment, comprises thereaction product formed by reaction of the reactive carbide-formingmetal with the diamond in the diamond body. The construction 44illustrated in FIG. 6 is provided in the form of a compact comprising asubstrate 54 attached to the diamond body 46. In an example embodiment,the substrate 54 is attached to the diamond body 46 via the region 50.

As described above, the optional material layer 52 may be formed duringthe HPHT process of infiltrating the infiltrant material (and reactionof the carbide-forming metal with the diamond) within the diamond body,during which process the material layer is formed in situ duringinfiltration and reaction product formation. Alternatively, the materiallayer 52 may be formed separately from the HPHT process used to form thereaction product within the diamond body, e.g., by depositing a desiredthickness of the infiltrant material onto the designated surface of thediamond body, and then subjecting the surface to temperature and/orpressure conditions sufficient to form the reaction product on thediamond body surface. Further still, the material layer may be formedindependent of the HPHT process by depositing a desired thickness of ametal carbide onto a surface of the diamond body by CVD, PVD or otherconventional processes.

The thickness of the material layer can and will vary depending on theparticular diamond body size, shape, and end-use application, as well asthe material selected for forming the material layer. In an exampleembodiment, the material layer thickness may be less than about 100micrometers, preferably in the range of from about 0.5 micrometers to 50micrometers, and more preferably in the range of from about 5 to 30micrometers. It is also within the scope of the present disclosure thatthe material layer 52 be formed during the HPHT process and thensubsequently be removed, such as by machining or finishing, depending onthe desired end use of the diamond construction.

While the diamond construction 44 is illustrated having a generallycylindrical wall surface with a working surface 56 positioned along anaxial end of the construction, it is to be understood that diamondconstructions of this disclosure may be configured having a variety ofdifferent shapes and sizes, with differently oriented working surfaces,depending on the particular wear and/or cutting application, e.g., basedon the different PCD compact constructions illustrated in FIGS. 2B to2E.

FIGS. 7A-7B illustrate cross-sectional side views of a diamondconstruction 70 of this disclosure. FIG. 7B illustrates the construction70 formed from the components 60 shown in FIG. 7A. As shown in FIG. 7A,a diamond body 62 is placed on a substrate 64 (or may be bondedthereto), and an infiltrant material 66 is placed on the opposingsurface of the diamond body 62. In this embodiment, diamond body 62includes two regions, a treated region 62 a (whereby the catalystmaterial has been removed therefrom), and an untreated region 62 b;however, other embodiments of the present disclosure may provide forinfiltration of a diamond body that has been completely treated suchthat the entire body is substantially free of catalyst material. UponHPHT sintering, infiltrant material 66 infiltrates into the pores of thediamond body 62, specifically, the treated region 62 a. Because diamondbody includes untreated region 62 b, metal from the substrate 64 neednot infiltrated into the diamond body so long as the diamond body isalready sintered to the substrate 64. The resulting construction 70 hasa diamond body 72 that is attached to a substrate 74. The diamond body72 includes a thermally stable diamond region 76 that extends a depthfrom a surface 78 of the diamond body. The thermally stable diamondregion 76 has a material microstructure comprising a polycrystallinediamond matrix first phase of bonded together diamond crystals, and asecond phase disposed interstitially within the matrix phase, as bestillustrated in FIG. 1. The contents second phase of the thermally stablediamond region 76 include metal carbide and an inert metal, with the twoexisting as a gradient structure of greater relative amounts of metalcarbide nearer the surface 78 and greater relative amounts of inertmetal nearer the second region. Because the second phase is disposedwithin the interstitial regions of the material microstructure thatpreviously existed as voids, the second phase may also be referred toherein as a plurality of second phases as such are dispersed throughoutthe matrix phase. As noted above, this region 76 may have an improveddegree of thermal stability when compared to conventional PCD, due bothto the absence of the catalyst material used to form the diamond bodyand to the presence of the metal carbide (particularly near the surface78) and inert metal, as this metal carbide has a coefficient of thermalexpansion that more closely matches diamond as contrasted to a catalystmaterial such as cobalt.

The diamond body 72 includes another region 71, which may be aconventional PCD region or a diamond region that includes anotherinfiltrant and that is substantially free of the catalyst material usedto initially form the diamond body. This other, or second, region 71extends a depth from the thermally stable diamond region 76 through thebody 72 to an interface 73 between the diamond body and the substrate74. As noted above, in an example embodiment, the other region 71 mayfacilitate an attachment bond with the substrate, thereby ensuring useand attachment of the resulting diamond construction to a desiredend-use application device by conventional means like welding, brazingor the like.

The first region 76 may extend from the surface of the diamond body toan average depth that may broadly range from 0.01 to 3.0 mm, that may beless than about 0.1 mm for certain applications, or that may be greaterthan about 0.1 mm for other applications. In a particular embodiment,first region 76 extends from the surface of the diamond body an averagedepth of from about 0.05 mm to about 0.5 mm. As noted above, for moreaggressive tooling, cutting and/or wear applications, the regionrendered substantially free of the catalyst material may extend a depthfrom the working surface of greater than about 0.1 mm, e.g., up to 0.2mm, 0.3 mm, 0.5 mm, or even 1.0 mm. In other embodiments, the firstregion 76 may extend a depth into diamond body 72 that is 5 to 95% ofthe total depth of the diamond body 72, in a particular embodiment. Inother embodiments, the first region 76 may extend a depth into thediamond body 72 that is the total depth of the diamond body 62 less 0.1mm, which is occupied by the second region 71. Further, within the firstregion 76, the portion of the first region 76 that interfaces the secondregion 71 may possess in its interstitial regions a metal carbide thatoccupies 0 to about 50% by volume of the interstitial, where the volumepercent of metal carbide within the interstitial regions increasesmoving towards the upper (or side) surface 78 of diamond body 72.

FIGS. 8A-8B are similar to the embodiment shown in FIG. 7A-7B. However,in the embodiment illustrated in FIGS. 8A-8B, the entire diamond body 62has been treated so that substantially all of the pores are free of acatalyst material. In addition to this difference, the infiltrant metal66 is provided in the form of a ring that is laid upon the upper surface68 of the diamond body 62, so that upon formation of the construction70, the thermally stable diamond region 76 (having the gradient asdescribed with respect to FIG. 7B is not present as a uniform layer, butis instead takes an annular shape. In such an embodiment, the thermallystable region 76 is present along the cutting portion of theconstruction 70 while maximizing the amount of the PCD region 71 (havingthe catalyst material or a subsequently infiltrated Group VIII metal).

FIGS. 9A-9B are similar to the embodiment shown in FIG. 7A-7B. However,in the embodiment illustrated in FIGS. 9A-9B, the infiltrant metal 66 isprovided in the form of a ring having an flange extension so that aportion of the side surface 69 of the diamond body is covered by theinfiltrant 66. Upon HPHT conditions, the construction 70 may possess athermally stable region 76 with a similar profile as the infiltrantmetal, whereby the thermally stable region 76 extends circumferentiallyaround the diamond body 72 side surface 79 a partial depth as well as apartial depth from a portion of the upper surface. Other embodiments mayalso allow for the use of a disk having a flange extension to allow forthe formation of a thermally stable region that extendscircumferentially around the diamond body side surface a partial depth,as well as a partial depth from the entire upper surface.

Diamond constructions of this disclosure will be better understood withreference to the following examples:

Example 1 Diamond Construction by Partial Leaching

Synthetic diamond powder having an average grain size of approximately 2to 50 micrometers is mixed together for a period of approximately 2-6hours by ball milling. The resulting mixture is cleaned by heating to atemperature in excess of 850° C. under vacuum. The mixture is loadedinto a refractory metal container. A WC—Co substrate is positionedadjacent a surface of the diamond powder volume. The container issurrounded by pressed salt (NaCl) and this arrangement is placed withina graphite heating element. This graphite heating element containing thepressed salt and the diamond powder and substrate encapsulated in therefractory container is loaded into a vessel made of a highpressure/high temperature self-sealing powdered ceramic material formedby cold pressing into a suitable shape.

The self-sealing powdered ceramic vessel is placed in a hydraulic presshaving one or more rams that press anvils into a central cavity. Thepress is operated to impose an intermediate stage processing pressureand temperature condition of approximately 5,500 MPa and approximately1,450° C. on the vessel for a period of approximately 5 minutes. DuringHPHT processing, cobalt from the WC—Co substrate infiltrates into theadjacent diamond powder mixture, and intercrystalline bonding betweenthe diamond crystals takes place forming PCD.

The vessel is opened and the resulting PCD compact is removed therefrom.A region of the PCD body is treated by acid leaching to remove thecatalyst material, i.e., cobalt, therefrom to a depth of approximately0.055 mm. After the leaching treatment is completed, the treated diamondbody with substrate bonded thereto is again loaded into the HPHT deviceand a infiltrant material comprising a metal alloy disk (containing atleast one of Cu, Ag, Au, Pd, or Pt and at least one of Ti, Zr, Nb, Mo,W, Ta, or V) is positioned adjacent the treated region. The HPHT deviceis operated to impose approximately 5,500 MPa and approximately 1,100°C. for a period of approximately 2 minutes. During which time theinfiltrant material melts and infiltrates into the treated region tofill the empty voids and pores created by removing the catalystmaterial, and the at least one of Ti, Zr, Nb, Mo, W, Ta, or V reactswith the diamond crystals to form a reaction product, i.e., TiC, ZrC,NbC, MoC, WC, TaC, or VC. Further, during this HPHT process the othermetal also infiltrates into the diamond body, and as the Ti, Zr, Nb, Mo,W, Ta, or V is reacted/depleted, the Cu, Ag, Au, Pd, or Pt infiltratesdeeper into the diamond body and becomes the primary component withinthe interstitial regions of the diamond body in the treated region.

The so-formed diamond construction has a diamond body with a thermallystable diamond region of approximately 0.055 mm thick having amicrostructure characterized by a polycrystalline diamond matrix firstphase and a metal carbide and/or inert metal second phase occupying amajor population of the empty voids. The total diamond body thicknessmay be approximately 2.5 mm, and the PCD region would have a thicknessof approximately 1.95 mm. The diamond body PCD region may be attached tothe WC—Co substrate having a thickness of approximately 13 mm. Further,these thicknesses are representative of a single example construction,and the scope of the present disclosure is not so limited. Rather, otherdiamond table thicknesses, as well other thermally stable regionthicknesses, may be used as described above.

Example 2 Diamond Construction by Complete Leaching

A PCD body is prepared in the same manner described above in Example 1.However, the entire PCD body is treated by acid leaching to remove thecatalyst material, i.e., cobalt, therefrom. Before the body is treated,the substrate is removed to facilitate the process of removing thecatalyst material therefrom. After the leaching treatment is completed,the treated diamond body is loaded into the HPHT device and a infiltrantmaterial comprising a metal alloy disk (containing at least one of Cu,Ag, Au, Pd, or Pt and at least one of Ti, Zr, Nb, Mo, W, Ta, or V) ispositioned adjacent a first region of the body and a WC—Co substrate ispositioned adjacent a second region of the body.

The HPHT device is operated to impose approximately 5,500 MPa andapproximately 1,100° C. for a period of approximately 2 minutes. Duringthis time the infiltrant material melts and infiltrates into the treatedregion to fill the empty voids and pores created by removing thecatalyst material, and the at least one of Ti, Zr, Nb, Mo, W, Ta, or Vreacts with the diamond crystals to form a reaction product, i.e., TiC,ZrC, NbC, MoC, WC, TaC, or VC. Further, during this HPHT process theother metal also infiltrates into the diamond body, and as the Ti, Zr,Nb, Mo, W, Ta, or V is reacted/depleted, the Cu, Ag, Au, Pd, or Ptinfiltrates deeper into the diamond body and becomes the primarycomponent within the interstitial regions of the diamond body in thetreated region.

While at the same pressure, the HPHT device is operated to impose anelevated temperature of approximately 1,450° C. for a period ofapproximately 5 minutes. During this time the other infiltrant material,cobalt, in the substrate melts and infiltrates into the second region ofthe diamond body to fill the empty voids and pores existing therein, andprovides a desired attachment bond between the substrate and the diamondbody.

The so-formed diamond construction has a diamond body with a thermallydiamond region of approximately 0.055 mm thick having a microstructurecharacterized by a polycrystalline diamond matrix first phase and ametal carbide and/or inert metal second phase occupying a majorpopulation of the empty voids. The total diamond body thickness may beapproximately 2.5 mm, and the second region may have a thickness ofapproximately 1.95 mm. The diamond body's second region wassubstantially free of the catalyst material used to initially form thePCD body and was attached to the WC—Co substrate, which substrate had athickness of approximately 13 mm. Further, these thicknesses arerepresentative of a single example construction, and the scope of thepresent disclosure is not so limited. Rather, other diamond tablethicknesses, as well other thermally stable region thicknesses, may beused as described above.

Such diamond constructions may display properties of improved fracturetoughness, strength and impact resistance when compared to conventionalthermally stable PCD that has been rendered such by removing thecatalyst material used to sinter the diamond body either fully orpartially therefrom, and that has a material microstructure comprising aresulting plurality of empty pores or voids. In an example embodimentwhere such diamond construction is configured in the form of a cuttingelement having a diameter of approximately 13 mm, such diamondconstruction displayed improved wear resistance, as measured by millscore length, of at least 300 percent when compared to an identicallysized cutting element formed from conventional PCD construction, andapproximately at least 50 percent when compared to a conventional TSPconstruction containing the plurality of empty voids resulting from theremoval of the catalyst material.

A feature of diamond constructions of this disclosure is that theyinclude a diamond body having a first region that includes, in itsinterstitial regions which are substantially free of the catalystmaterial used to form the body, a gradient structure of a metal carbideand an inert metal. The diamond body also possesses a further secondregion that either comprises PCD (having the catalyst material therein)or a bonded-together diamond crystals whose interstitial regions arealso substantially free of the catalyst material, but which may haveanother infiltrant material occupying those spaces. The population ofinterstitial regions within the diamond body may substantially filled,thereby providing a resulting material microstructure having an improveddegree of mechanical strength, toughness, and thermal stability.Further, the diamond construction may also optionally include a materiallayer disposed on at least a portion of the diamond body surface thatforms at least a portion of the construction working surface, and thatimproves the impact strength and fracture toughness of the compact.Still further, diamond constructions of this disclosure include asubstrate bonded to the diamond body, thereby enabling constructions ofthis disclosure to be attached by conventional methods such as brazing,welding or the like to a variety of different tooling, cutting and/orwear devices to greatly expand the types of potential end-useapplications.

Diamond constructions of this disclosure may be used in a number ofdifferent applications, such as tools for mining, cutting, machining andconstruction applications, where the combined properties of thermalstability, strength/toughness, impact strength, and wear and abrasionresistance are highly desired. Diamond constructions of this disclosureare particularly well suited for use as working, wear and/or cuttingcomponents in machine tools for lathing and or milling, and drill andmining bits, such as roller cone rock bits, percussion or hammer bits,diamond bits, and shear cutters used for drilling subterraneanformations.

FIG. 10 illustrates an embodiment of a diamond construction of thisdisclosure provided in the form of an insert 80 used in a wear orcutting application in a roller cone drill bit or percussion or hammerdrill bit. For example, such inserts 80 may be formed from blankscomprising a substrate portion 82 formed from one or more of thesubstrate materials disclosed above, and a diamond body 84 having aworking surface 86 formed from the thermally stable region of thediamond body. The blanks are pressed or machined to the desired shape ofa roller cone rock bit insert.

FIG. 11 illustrates a rotary or roller cone drill bit in the form of arock bit 88 comprising a number of the wear or cutting inserts 80disclosed above and illustrated in FIG. 10. The rock bit 88 comprises abody 90 having three legs 92, and a roller cutter cone 94 mounted on alower end of each leg. The inserts 80 may be fabricated according to themethod described above. The inserts 80 are provided in the surfaces ofeach cutter cone 94 for bearing on a rock formation being drilled.

FIG. 12 illustrates the inserts 80 described above as used with apercussion or hammer bit 96. The hammer bit comprises a hollow steelbody 98 having a threaded pin 100 on an end of the body for assemblingthe bit onto a drill string (not shown) for drilling oil wells and thelike. A plurality of the inserts 80 is provided in the surface of a head102 of the body 98 for bearing on the subterranean formation beingdrilled.

FIG. 13 illustrates a diamond construction of this disclosure asembodied in the form of a shear cutter 104 used, for example, with adrag bit for drilling subterranean formations. The shear cutter 104comprises a diamond body 106 that is sintered or otherwise attached to acutter substrate 108. The diamond body 106 includes a working or cuttingsurface 110 that includes the material layer that is disposed on asurface of the diamond body.

FIG. 14 illustrates a drag bit 112 comprising a plurality of the shearcutters 104 described above and illustrated in FIG. 13. The shearcutters are each attached to blades 114 that extend from a head 116 ofthe drag bit for cutting against the subterranean formation beingdrilled.

Embodiments of the present disclosure may provide at least one of thefollowing advantages. Such diamond constructions may display propertiesof improved fracture toughness, strength and impact resistance whencompared to conventional thermally stable PCD that has been renderedsuch by removing the catalyst material used to sinter the diamond bodyeither fully or partially therefrom, and that has a materialmicrostructure comprising a resulting plurality of empty pores or voids.In an example embodiment where such diamond construction is configuredin the form of a cutting element having a diameter of approximately 13mm, such diamond construction displayed improved wear resistance, asmeasured by mill score length, of at least 300 percent when compared toan identically sized cutting element formed from conventional PCDconstruction, and approximately at least 50 percent when compared to aconventional TSP construction containing the plurality of empty voidsresulting from the removal of the catalyst material.

A feature of diamond constructions of this disclosure is that theyinclude a diamond body having a first region that includes, in itsinterstitial regions which are substantially free of the catalystmaterial used to form the body, a gradient structure of a metal carbideand an inert metal. The diamond body also possesses a further secondregion that either comprises PCD (having the catalyst material therein)or a bonded-together diamond crystals whose interstitial regions arealso substantially free of the catalyst material, but which may haveanother infiltrant material occupying those spaces. The population ofinterstitial regions within the diamond body may substantially filled,thereby providing a resulting material microstructure having an improveddegree of mechanical strength, toughness, and thermal stability.Further, the diamond construction may also optionally include a materiallayer disposed on at least a portion of the diamond body surface thatforms at least a portion of the construction working surface, and thatimproves the impact strength and fracture toughness of the compact.Still further, diamond constructions of this disclosure include asubstrate bonded to the diamond body, thereby enabling constructions ofthis disclosure to be attached by conventional methods such as brazing,welding or the like to a variety of different tooling, cutting and/orwear devices to greatly expand the types of potential end-useapplications.

While the invention has been described with respect to a limited numberof embodiments, those skilled in the art, having benefit of thisdisclosure, will appreciate that other embodiments can be devised whichdo not depart from the scope of the invention as disclosed herein.Accordingly, the scope of the invention should be limited only by theattached claims.

1.-20. (canceled)
 21. A method for making a diamond construction,comprising: treating a diamond body having a material microstructurecomprising a matrix phase of bonded-together diamond grains andinterstitial regions disposed between the diamond grains, wherein acatalyst material used to form the diamond body during a first highpressure/high temperature condition is disposed within the interstitialregions, wherein during the step of treating, the catalyst material isremoved from interstitial regions of the diamond body; placing aninfiltrant material next to the diamond body depleted of the catalystmaterial, wherein the infiltrant material comprises an alloy having atleast two metals, one of the two metals being a carbide-forming metal,and the other of the two metals being an inert metal; and subjecting thediamond body to second high pressure/high temperature condition in orderto allow an alloy to infiltrate into interstitial regions and to form ametal carbide between the carbide-forming metal in the infiltrantmaterial and the diamond grains within the interstitial regions at leastadjacent to a surface of the diamond body.
 22. The method of claim 21,wherein the interstitial regions remote from the surface have a greaterrelative amount of inert metal and a lower relative amount of carbidetherein as compared to the interstitial region adjacent the surface. 23.The method of claim 21, wherein the second high pressure/hightemperature condition comprises a temperature ranging from about 800 to1700° C.
 24. The method of claim 21, wherein upon reaching melting ofthe infiltrant material, the temperature of the second highpressure/high temperature condition is changed at a rate of about 1 to100° C./sec.
 25. The method of claim 24, wherein upon reaching meltingof the infiltrant material, the temperature of the second highpressure/high temperature condition is changed at a rate of about 5 to25° C./sec.
 26. The method of claim 21, further comprising: introducinganother infiltrant into the interstitial regions depleted of thecatalyst material and not occupied by the metal carbide or inert metal,wherein the another infiltrant is a Group VIII metal, and wherein thediamond body is substantially free of the catalyst material prior tothis process.
 27. The method of claim 21, wherein after the step oftreating, the catalyst material is allowed to remain in at least a partof a population of the interstitial regions.
 28. The method of claim 21,wherein the diamond construction comprises a metallic substrate attachedto the diamond body.
 29. The method of claim 21, wherein during the stepof introducing the infiltrant material, the second high pressure/hightemperature condition is at a temperature that is less than that of thefirst high pressure/high temperature condition.
 30. The method of claim21, wherein after the step of introducing the infiltrant material, thesecond high pressure/high temperature condition is at a temperatureapproximately the same as that of the first high pressure/hightemperature condition.
 31. The method of claim 21, wherein after thestep of introducing the infiltrant material, the second highpressure/high temperature condition is at a temperature that is higherthan that of the first high pressure/high temperature condition.
 32. Amethod for making a diamond construction, comprising: placing a firstinfiltrant material next to the diamond body having a materialmicrostructure of a matrix phase of bonded-together diamond grains andinterstitial regions disposed between the diamond grains, theinterstitial regions being substantially free a catalyst material usedto form the diamond body, wherein the infiltrant material comprises analloy having at least two metals, one of the two metals being acarbide-forming metal, and the other of the two metals being an inertmetal; introducing the first infiltrant material into interstitialregions within a first region of the diamond body to form a metalcarbide between the carbide-forming metal in the infiltrant material andthe diamond grains within the interstitial regions within the firstregion; and introducing a second infiltrant material into theinterstitial regions of a second region of the diamond body not occupiedby the metal carbide or inert metal, the second infiltrant materialinfiltrating from a substrate material, thereby bonding the diamond bodyto the substrate material.
 33. The method of claim 32, wherein uponreaching melting of the infiltrant material, introducing the firstinfiltrant material comprises subjecting the diamond body and the firstinfiltrant material to high pressure high temperature conditions havingthe temperature increase at a rate between about 1 and 100° C./sec. 34.The method of claim 33, wherein upon reaching melting of the infiltrantmaterial, introducing the first infiltrant material comprises subjectingthe diamond body and the first infiltrant material to high pressure hightemperature conditions having the temperature increase at a rate betweenabout 2 and 50° C./sec.
 35. The method of claim 34, wherein uponreaching melting of the infiltrant material, introducing the firstinfiltrant material comprises subjecting the diamond body and the firstinfiltrant material to high pressure high temperature conditions havingthe temperature increase at a rate between about 5 and 25° C./sec. 36.The method of claim 32, wherein introducing the first infiltrantmaterial comprises controlled high pressure high temperature conditionsto form a gradient of the metal carbide and the inert metal within thefirst region of the diamond body.
 37. The method of claim 32, whereinintroducing the second infiltrant material comprises subjecting thediamond body to high pressure high temperature conditions that aregreater than that used to introduce the first infiltrant material. 38.The method of claim 32, wherein the interstitial regions in the firstregion adjacent the second region of the diamond have a greater relativeamount of inert metal and a lower relative amount of carbide therein ascompared to the interstitial region remote from the second region of thediamond body.
 39. The method of claim 21, wherein the insert metalcomprises at least one selected from the group consisting of Cu, Ag, Au,Pd, Pt, and combinations thereof.
 40. The method of claim 21, whereinthe carbide-forming metal comprises at least one selected from the groupconsisting of Ti, Zr, Nb, Mo, W, Ta, V, Si, Cr, B, Hf, and combinationsthereof.